| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein accuracy of aligning thin film transistor composing layers formed in an ion implantation region is improved. <P>SOLUTION: After simultaneously forming a resist pattern 22A for ion implantation and a resist pattern 22B for an alignment mark on a semiconductor film 13, ion implantation 23 is applied to the whole surface of that patterns, and after applying ashing 24 to an altered layer 16 formed on a resist pattern 22A' other than a resist pattern forming part B' for the alignment mark, the resist pattern 22A' is removed. After applying activation 25, a resist pattern 26 for islanding the semiconductor film 13 is formed with the resist pattern 22B for the alignment mark as a reference for alignment, a semiconductor part 13A and alignment mark 9 are formed by islanding the semiconductor film 13 using it, and an insulating film 14, a gate electrode 15g, a source electrode 15s and a drain electrode 15s are formed with the alignment mark 9 as a reference for alignment. <P>COPYRIGHT: (C)2011,JPO&INPIT |
