发明名称 |
Light emitting device and method for manufacturing the same |
摘要 |
An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
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申请公布号 |
US7816863(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20040933507 |
申请日期 |
2004.09.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;HAMADA TAKASHI;NAGAI MASAHARU;MATSUDA YUTAKA |
分类号 |
H05B33/22;H01L21/316;H01L27/32;H01L51/52;H05B33/00;H05B33/10;H05B33/12;H05B33/20 |
主分类号 |
H05B33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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