| 摘要 |
PROBLEM TO BE SOLVED: To provide etching technique adaptive to a film to be processed of a laminate structure including a film which may produce difficult-to-remove reaction products during etching. SOLUTION: The method of manufacturing a semiconductor device includes: forming a mask layer including a hard mask film and a photoresist film laminated on the hard mask film selectively on the film to be processed; carrying out first etching on the film to be processed using the mask layer including the photoresist film as a mask; and further carrying out second etching on the film to be processed using the hard mask film as a mask in a state wherein the photoresist film is substantially absent in the mask layer. COPYRIGHT: (C)2011,JPO&INPIT
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