| 摘要 |
PROBLEM TO BE SOLVED: To reduce a feedback capacity, to improve a withstand voltage characteristic, and to increase a maximum available gain of a transistor element to improve the gain in a high frequency domain. SOLUTION: A semiconductor device includes: a gate electrode 2; a field plate electrode 7 formed over the gate electrode 2 through an insulating film 6; and an inductive element 8. The field plate electrode 7 is grounded through the inductive element 8. COPYRIGHT: (C)2010,JPO&INPIT |
