| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor capable of increasing the surface area of a photoelectric transducer and effectively transferring a carrier incorporated in a vertical transfer. <P>SOLUTION: The solid-state image sensor is provided with a substrate 1 having a trench 7 on the light reception side, a gate electrode 12 formed so as to embed the trench 7 through a fist insulating film 10, the vertical transfer 4 formed adjacent to the side of the trench 7, the photoelectric transducer 13 formed by being electrically isolated from the vertical transfer 4, an embedded carrier laminated layer 3 that is electrically connected to the photoelectric transducer 13, is formed at the lower position of the photoelectric transducer section 13 an extends downwardly of the trench 7 and the vertical transfer section 4. A channel area 9 is located between the vertical transfer 4 and the embedded carrier laminated layer 3, and is formed adjacent to the trench 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
