| 摘要 |
A method for producing of non-stoichiometric thermal-electrical material n-PbBiTe<Te> comprises the charging quartz vessel of starting components – lead (Pb), bismuth (Bi) and tellurium (Te), which in the mass rate corresponding of PbBiTecompounds, which is placed in furnace, temperature of which exceeds the temperature of melting of starting components. An ampoule is kept this temperature, homogenizing annealing and cooling on air to room temperature ate performed, and after that produced ingots are grinded and pressed. Overstoichiometric tellurium to 2 atm. % of high class of grade (99,999 %) is additionally used as starting components. |
