| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to increase the mobility of electrons by additionally SOD(Silicon On Dielectric) film into a conventional dielectric layer between two silicon layers. CONSTITUTION: An oxide film(110) is formed on a lower silicon layer(100). An SOD(Spin On Dielectric)(120) film is formed on the oxide film. An upper silicon layer is formed on the SOD film. An element isolation film(150) defining an active area(140) is formed in the upper silicon layer. An active area is etched to from a recess area. The oxide film(180) is formed in the recess area.</p> |
