METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent the generation of a SAC failure by preventing the generation of a bridge between a gate and a LPC plug. CONSTITUTION: A device separating film, which limits an active area(102), is formed. A screen oxidation film(120) is formed on the active area of a semiconductor substrate. The device separating film(110) part is etched and a first recess pattern is formed on the active area. A second recess pattern is formed on the device separating film. The width of the second recess pattern is expanded while simultaneously eliminating the screen oxidation film. A first insulating layer is formed on the substrate having the second recess pattern with the expanded width.