| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device of forming a polycrystalline silicon film that forms the polycrystalline silicon film with excellent characteristics in a short time, and a substrate having the polycrystalline silicon film formed thereon thereby. SOLUTION: Silicon particulates are produced by heating a silicon evaporation source 15, transported, and jetted into a vacuum chamber 30 while carried with an air current of a supersonic free jet J to be physically vapor-deposited on a substrate 33 arranged in the vacuum chamber 30, thereby forming the polycrystalline silicon film of the silicon particulates. COPYRIGHT: (C)2010,JPO&INPIT |
