| 摘要 |
A semiconductor device comprises a first region including a first semiconductor element and a second region including a second semiconductor element different from the first semiconductor element. A silicon germanium film is formed on a surface of a semiconductor substrate in the first region and the second region. The surface of the silicon germanium film at least in the first region is nitrided. A first insulating film mainly includes silicon and oxygen is formed, on the silicon germanium film nitrided at least in the first region in the first region and the second region. The first insulating film in the second region is removed. A second insulating film mainly includes metal and oxygen is formed, on the nitrided silicon germanium film in the second region.
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