发明名称 |
Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained |
摘要 |
A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.
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申请公布号 |
US7736919(B2) |
申请公布日期 |
2010.06.15 |
申请号 |
US20060884540 |
申请日期 |
2006.02.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
NOE PIERRE;MAZEN FREDERIC |
分类号 |
H01L21/00;H01L27/15 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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