发明名称 Method to provide a higher reference voltage at a lower power supply in flash memory devices
摘要 A fast reference circuit having active feedback includes a bias supply circuit and a variable divider circuit connected by an active feedback path to the bias supply circuit, and a comparator circuit connected to the variable divider circuit, the bias supply circuit, and a reference node of the variable divider circuit. In one embodiment, a start-up circuit initially discharges a potential at the bias supply and comparator circuits, then initializes a reference voltage at the reference node at about zero volts to improve repeatability. In one embodiment, the variable voltage divider comprises an impendence that is trimmed based on a sheet resistance of a process used to fabricate the fast reference circuit, and further comprises a variable reference current circuit coupled to the impedance and configured to generate a current having a value based on a desired reference voltage and to conduct the current through the impedance, thereby generating the reference voltage associated therewith. The comparator circuit is configured to compare the bias supply voltage to the reference voltage, and drive the bias supply and the variable divider circuit in response to the comparison, thereby quickly stabilizing the reference voltage.
申请公布号 US7724075(B2) 申请公布日期 2010.05.25
申请号 US20060634776 申请日期 2006.12.06
申请人 SPANSION LLC 发明人 YANG TIEN-CHUN;WU YONGGANG;YANG NIAN
分类号 G05F1/575 主分类号 G05F1/575
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