发明名称 Memory system
摘要 A memory system is provided, comprising at least one memory unit and a source power supply circuit. Each memory unit is coupled between a source voltage and a ground voltage and accesses digital data according to a word line signal and a bit line signal. The source power supply circuit provides the source voltage to the memory units. When the memory unit is in a writing status, the source voltage is the first power voltage. When the memory unit is in a reading status, the source voltage is the second power voltage. The second power voltage equals to the first power voltage subtracted by a specific voltage for avoiding rewriting error.
申请公布号 US7706203(B2) 申请公布日期 2010.04.27
申请号 US20080191116 申请日期 2008.08.13
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 CHEN JUI-LUNG;CHUNG YI-HSUN;CHANG CHIA-CHIUAN;CHEN WEI-SHUNG
分类号 G11C5/14 主分类号 G11C5/14
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