发明名称 |
Methods of Fabricating Transistors Having Buried P-Type Layers Coupled to the Gate |
摘要 |
A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein.
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申请公布号 |
US2010072520(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20090627743 |
申请日期 |
2009.11.30 |
申请人 |
SRIRAM SAPTHARISHI;WILLIS MATT |
发明人 |
SRIRAM SAPTHARISHI;WILLIS MATT |
分类号 |
H01L29/812;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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