| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an interface level without damaging a gate oxide film and an interface between the gate oxide film and a semiconductor substrate. Ž<P>SOLUTION: A fluorine-containing film 8 formed of a laminated film of a polysilicon film 8a and a tungsten silicide film 8b and containing fluorine is formed on a gate electrode 4 covered with a silicon oxide film 6. In this case, the polysilicon film 8a is first formed on the gate electrode 4 covered with the silicon oxide film 6, and then the tungsten silicide film 8b is formed on the polysilicon film 8a by an LPCVD method with WF<SB>6</SB>and SiH<SB>4</SB>as material gas. In this case, fluorine in WF<SB>6</SB>reacts with hydrogen in SiH<SB>4</SB>, and most of fluorine is exhausted as hydrogen fluoride (HF) gas and the reaction for forming the tungsten silicide film 8b continues, however a part of fluorine is taken into the tungsten silicide film 8b. Thereafter, heat treatment is performed for thermal diffusion of fluorine in the tungsten silicide film 8b into the gate oxide film 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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