发明名称 |
Very high-density three-dimensional structure |
摘要 |
<p>The structure has a large number of parallelepipedic thin blades (21) extending from bottom of a recess to a substrate surface while being oriented perpendicular to each other and formed in a pattern covering whole surface of the recess. Some of the blades are placed non-secant to one of walls (13-19), where each non-secant blade is connected to one of the walls by another perpendicular blade. The substrate and the blades are made of silicon. The blades have a thickness smaller than 0.8 micrometer, and are separated from each other by distance shorter than 0.8 micrometer.</p> |
申请公布号 |
EP2161238(A1) |
申请公布日期 |
2010.03.10 |
申请号 |
EP20090169175 |
申请日期 |
2009.09.01 |
申请人 |
STMICROELECTRONICS (TOURS) SAS |
发明人 |
MORAND, JEAN-LUC |
分类号 |
B81B3/00;H01L29/92;H01M8/10 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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