发明名称 Very high-density three-dimensional structure
摘要 <p>The structure has a large number of parallelepipedic thin blades (21) extending from bottom of a recess to a substrate surface while being oriented perpendicular to each other and formed in a pattern covering whole surface of the recess. Some of the blades are placed non-secant to one of walls (13-19), where each non-secant blade is connected to one of the walls by another perpendicular blade. The substrate and the blades are made of silicon. The blades have a thickness smaller than 0.8 micrometer, and are separated from each other by distance shorter than 0.8 micrometer.</p>
申请公布号 EP2161238(A1) 申请公布日期 2010.03.10
申请号 EP20090169175 申请日期 2009.09.01
申请人 STMICROELECTRONICS (TOURS) SAS 发明人 MORAND, JEAN-LUC
分类号 B81B3/00;H01L29/92;H01M8/10 主分类号 B81B3/00
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