| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a non-insulated type DC-DC converter, which has high conversion efficiency by reducing parasitic inductance. SOLUTION: In the semiconductor device, a high-side driver 4a is arranged in a region closer to a periphery of a semiconductor substrate 1 than a high-side switch 2, and a low-side driver 4b is arranged in a region closer to the periphery of the semiconductor substrate 1 than the low-side switch 3. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch 2 and the low-side switch 3 is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver 4a is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver 4a is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved. COPYRIGHT: (C)2010,JPO&INPIT |
