| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to a pattern defect of defocus generated in net-die area by protecting an insulating film and a support layer of a net-die. CONSTITUTION: A first insulating layer(210) and a support layer are formed on a wafer(200) with a net die region(2000a) and non-net die region(2000b). The support layer and the first insulating layer are etched, and the bottom electrode and a protective film are formed. The conductive layer is formed on the whole surface thereof. The conductive layer be flat-etched and the bottom electrode(330) is formed on the net die range. The protective film(255) is formed in a border of the non-net die range and the net die range. The protective film is formed to be uneven.</p> |
