| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having an MTJ element having good operation characteristics, and to provide a manufacturing method thereof. SOLUTION: An MTJ element MD1 is formed of a laminate substance wherein a lower magnetic film 6, a tunnel insulating film 7 and an upper magnetic film 8 are laminated in order. The lower magnetic film 6 and the upper magnetic film 8 contain cobalt-iron-boron (CoFeB) in an amorphous or microcrystalline state as a composition material. The tunnel insulating film 7 contains an aluminum oxide (AlO<SB>x</SB>) as a composition material. A CAP layer CP1 is formed on the upper magnetic film 8 of the MTJ element MD1, and a hard mask HM1 is formed on the CAP layer CP1. The CAP layer CP1 has a crystalline ruthenium (Ru) simple substance as a composition material, and the hard mask HM1 has a crystalline tantalum (Ta) simple substance as a composition material. A film thickness of the hard mask HM1 is thicker than that of the CAP layer CP1. COPYRIGHT: (C)2010,JPO&INPIT |
