发明名称 CHARGED BEAM LITHOGRAPHY SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged beam lithography system capable of performing precise lithography by suppressing bending of a frame by the dead weight of a lithography chamber, and the vibration of the lithography chamber by the bending. Ž<P>SOLUTION: The electron beam lithography system 11 has: the lithography chamber 13 having an electron-optical barrel 17 at an upper portion; a vacuum robot chamber 14 communicating with the lithography chamber 13 via a gate valve 20; a frame 22 for placing the vacuum robot chamber 14 and the lithography chamber 13; and a stay 25 for fixing the distance between the vacuum robot chamber 14 and the lithography chamber 13 to a prescribed distance. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009278002(A) 申请公布日期 2009.11.26
申请号 JP20080129823 申请日期 2008.05.16
申请人 NUFLARE TECHNOLOGY INC 发明人 SAITO HIROYASU
分类号 H01L21/027;G03F7/20;H01J37/16;H01J37/305 主分类号 H01L21/027
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