发明名称 Induktive integrierte Struktur mit geteilten Werten auf einem Halbleitersubstrat
摘要 An integrated circuit including a structure of inductances on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, including a first inductance formed by a conductive track and having first and second terminals respectively connected to each of the two ends of the conductive track, including a second inductance formed by the conductive track between the second terminal and any intermediary point of the conductive track connected to a third terminal, said second and third terminals forming the two terminals of the second inductance, and means for setting the third terminal to high impedance when the first inductance is used.
申请公布号 DE60139841(D1) 申请公布日期 2009.10.22
申请号 DE2001639841 申请日期 2001.07.23
申请人 STMICROELECTRONICS S.A. 发明人 CASTILLEJO, ARMAND;RERAT, FABIENNE
分类号 H01F17/00;H01F21/12;H01L23/522;H01L23/64;H01L23/66 主分类号 H01F17/00
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