发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 The present invention is a method of forming a barrier layer, which includes an insulator, on a fluorocarbon film formed on a substrate, the method including the steps of producing a plasma from a gas, forming the barrier layer on the fluorocarbon film by using the plasma and exposing the surface of the substrate to the plasma including a nitrogen to dope the nitrogen to the surface of the barrier layer.
申请公布号 WO2009040670(A3) 申请公布日期 2009.10.15
申请号 WO2008IB03119 申请日期 2008.09.25
申请人 TOKYO ELECTRON LIMITED;MIYATANI, KOTARO 发明人 MIYATANI, KOTARO
分类号 H01L21/314;H01L21/768;H01L23/522 主分类号 H01L21/314
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