发明名称 |
DRIVING METHOD OF NANOGAP DEVICE AND STORAGE DEVICE EQUIPPED WITH NANOGAP DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a driving method of a nanogap device and a storage device equipped with the nanogap device, capable of appropriately storing multivalued information on three or more values in the nanogap device. <P>SOLUTION: The nanogap device 10 is arranged between a first electrode 2 and a second electrode 3 provided on an insulating substrate 1 and provided with an inter-electrode gap part 4 having a gap of a nanometer order and resistance states to be switched by application of a predetermined voltage between the first electrode 2 and the second electrode 3, and the resistance states are divided as three or more states. It is configured such that a voltage pulse of a voltage value corresponding to each resistance state is applied between the first electrode 2 and the second electrode 3 of the nanogap device 10, and when one or more other resistance states exist between the resistance state before application which is the present resistance state, and the objective resistance state, a voltage pulse of a voltage value corresponding to the objective resistance state is applied after a voltage pulse of a voltage value corresponding to the other resistance state is applied in the order of the magnitude of the voltage value. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009205709(A) |
申请公布日期 |
2009.09.10 |
申请号 |
JP20080044119 |
申请日期 |
2008.02.26 |
申请人 |
FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;FUNAI ELECTRIC CO LTD |
发明人 |
MASUDA YUICHIRO;FURUTA SHIGEO;TAKAHASHI TAKESHI;NAITO YASUHISA;SHIMIZU TETSUO;HORIKAWA MASAYO |
分类号 |
G11C13/00;H01L27/10;H01L45/00;H01L49/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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