发明名称 |
SEMICONDUCTOR COMPONENT INCLUDING A DRIFT ZONE AND A DRIFT CONTROL ZONE |
摘要 |
Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two sections arranged at a distance from one another in a current flow direction of the component. At least one separating structure is arranged between the drift zone and the drift control zone in the region of an interruption, defined by the at least two sections, of the drift control zone dielectric and has at least one PN junction.
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申请公布号 |
US2009189216(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20080019750 |
申请日期 |
2008.01.25 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
WERNER WOLFGANG;HIRLER FRANZ |
分类号 |
H01L29/78;H01L21/02 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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