发明名称 Multi-chip semiconductor device with high withstand voltage, and a fabrication method of the same
摘要 A multi-chip semiconductor device includes a substrate, a first semiconductor chip, a second semiconductor chip, and a plastic mold. The first semiconductor chip has a function for executing a predetermined electrical operation and is installed on the substrate. The second semiconductor chip is installed on the first semiconductor chip and is configured to integrate a power circuit to receive an external power supply and to supply an electric power to the first semiconductor chip based on the external power supply. The plastic mold seals together the first and second semiconductor chips on the substrate.
申请公布号 US7538439(B2) 申请公布日期 2009.05.26
申请号 US20080133715 申请日期 2008.06.05
申请人 RICOH COMPANY, LTD. 发明人 FUJITO HIROSHI;TAKAMORI YASUHIRO
分类号 H01L23/52;H01L21/44 主分类号 H01L23/52
代理机构 代理人
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