METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an ohmic electrode by repairing damage by etching. SOLUTION: A method of manufacturing a semiconductor device comprises: a surface layer forming step of forming a heterogeneous surface layer on a surface of a p-type nitride semiconductor; an etching step of exposing the surface of the p-type nitride semiconductor by removing part of the surface layer; an annealing step of subjecting the p-type nitride semiconductor after the etching step to a heating process; and an electrode forming step of forming electrodes on the surface of the p-type nitride semiconductor after the annealing step. The annealing step is characterized by being executed in a nitrogen or oxygen atmosphere at 700-1,200°C. COPYRIGHT: (C)2009,JPO&INPIT