发明名称 |
Compressive nitride film and method of manufacturing thereof |
摘要 |
Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8 W/cm2 and 5.0 W/cm2; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.
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申请公布号 |
US7514370(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20060419217 |
申请日期 |
2006.05.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG DAEWON;LEE WOO-HYEONG;SU TAI-CHI;WANG YUN-YU |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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