SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD

摘要

Provided is a semiconductor laser element (1) comprising a window region (23) including a mixed crystal portion formed by the diffusion of III-group vacancies, and a non-window region (24) having an active layer (15) of a quantum well structure. A promoting film for promoting the diffusion of the III-group vacancies by absorbing predetermined atoms is formed over the window region (23) thereby to form the mixed crystal portion. The semiconductor laser element (1) is characterized in that the layer near the active layer (15) is doped with an impurity for substituting a V-group site preferentially so that the difference between the energy band gap in the window region and the energy band gap in the non-window region is 50 meV or more.