发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device includes: a semiconductor substrate, on which diffusion layers are formed; and multilayered wirings stacked above the semiconductor substrate to be connected to the diffusion layers via contact plugs, wherein a first wring and a second wiring formed thereabove are connected to the diffusion layers via first contact plug(s) and second contact plugs, respectively, and the number of the second contact plugs arrayed in parallel is set to be greater than that of the first contact plug(s).
申请公布号 US2009020785(A1) 申请公布日期 2009.01.22
申请号 US20080171650 申请日期 2008.07.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKASE SATORU
分类号 H01L29/00 主分类号 H01L29/00
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