CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR PHASE-CHANGE MEMORY DEVICE POLISHING AND METHOD OF POLISHING PHASE-CHANGE MEMORY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase-change memory device chemical mechanical polishing (CMP) slurry composition for polishing a phase-change memory device at high speed. SOLUTION: This problem is solved by a phase-change memory device chemical mechanical polishing (CMP) slurry composition containing deionized water and a nitride compound. COPYRIGHT: (C)2009,JPO&INPIT