| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist separation method capable of satisfactorily separating a resist attached to a substrate on whose surface a low dielectric film (porous Low-k film) is formed from the substrate without damaging the porous low dielectric film. SOLUTION: A reinforcement treating fluid is prepared by mixing a reinforcement agent essentially including a silylation agent with SCCO2 and supplied to a treatment chamber. Accordingly, the porous Low-k film formed on the substrate W is silylated. A separation agent essentially including a fluoride component is then mixed with the SCCO2 to prepare a separation treating fluid, and the separation treating fluid is supplied to the treatment chamber. Because etching resistance to the separation agent of the porous Low-k film is enhanced by the silylation, the resist can be separated and removed without damaging the porous Low-k film. COPYRIGHT: (C)2009,JPO&INPIT |
