| 摘要 |
A semiconductor memory device is provided to reduce the area of a circuit required for the semiconductor memory device to perform row repair. A semiconductor memory device includes a number of memory banks(000,001,002,003). A number of cell arrays(000,001,100,101,200,201,300,301) belong to each bank. A number of word lines belong to each cell array. More than one repair word line belongs to each cell array. A number of repair information storing parts(U0,U1,D0,D1) store a row address and bank information for a word line to be replaced with the repair word line among the word lines.
|
