发明名称 GRAY TONE MASK AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a gray tone mask of a halftone film type by which a high-quality TFT can be manufactured. <P>SOLUTION: The gray tone mask for manufacturing a thin film transistor substrate has a pattern for a thin film transistor substrate, the pattern including a light-shielding part, a light transmitting part and a light semitransmitting part formed by patterning a light semitransmitting film and a light-shielding film formed on a transparent substrate. The pattern for a TFT substrate includes patterns corresponding to a source and a drain and comprising two light-shielding parts separated from each other and a pattern corresponding to a channel part adjoining to and interposed between the above two light-shielding parts and comprising a light semitransmitting part, and includes a portion where the two light-shielding parts and the semitransmitting part interposed therebetween are arranged in one direction; wherein in an adjoining portion between the channel part and the source and between the channel part and the drain, a light semitransmitting film with addition of a desired margin region is formed in a region corresponding to the channel part. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008282046(A) 申请公布日期 2008.11.20
申请号 JP20080193231 申请日期 2008.07.28
申请人 HOYA CORP 发明人 IMURA KAZUHISA;SANO MICHIAKI
分类号 G02F1/13;G02F1/1368;G03F1/54;G03F1/70;H01L21/00;H01L21/027;H01L21/336;H01L29/786 主分类号 G02F1/13
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