发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
In one embodiment, to fabricate a semiconductor device, a first insulation interlayer is formed on a substrate. A contact pad is formed through the first insulation interlayer. An etch stop layer and a second insulation interlayer are sequentially formed on the first insulation interlayer and the pad. A contact hole exposing at least a portion of the contact pad is formed by partially etching the second insulation interlayer and the etch stop layer. A preliminary lower electrode is formed in the hole. The preliminary lower electrode is isotropically etched to form a lower electrode contacting the contact pad. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.
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申请公布号 |
US7439150(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20050245367 |
申请日期 |
2005.10.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SHIN-HYE;LEE JU-BUM;KIM MIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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