| 摘要 |
PURPOSE:To shorten the process of manufacturing a semiconductor device, by a method wherein a Ti layer containing an element other than Ti or a TiN layer in addition thereto is laminated on a semiconductor substrate and treated at a specific temperature, thereby to obtain an excellent ohmic contact. CONSTITUTION:Both surfaces of an Si substrate having P-N junctions are provided with TiN layers 4, 4' having a thickness of about 2,000Angstrom , to which leads 7, 7' are attached through Ni layers 5, 5' and solder layers 6, 6', respectively. If the substrate is treated in an inert gas at 650-1,000 deg.C after the deposition of the TiN layers, the treatment temperature, which is comparatively high, makes it possible to simplify as well as shorten the process for allowing the electrode layers to have ohmic contacts. Moreover, by this method, the junction forming process, the activating process and the like for a III-V family semiconductor or IVfamily semiconductor can be genelarized to the electrode-layer annealing process, so that it is possible to simplify the complicated device-manufacturing process. |
