发明名称 |
Nitride-based semiconductor light emitting diode |
摘要 |
Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
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申请公布号 |
US2008210972(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070003276 |
申请日期 |
2007.12.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KO KUN YOO;KIM JE WON;KIM DONG WOO;PARK HYNG JIN;HWANG SEOK MIN;CHAE SEUNG WAN |
分类号 |
H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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