发明名称 |
HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE |
摘要 |
A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.
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申请公布号 |
US2008197410(A1) |
申请公布日期 |
2008.08.21 |
申请号 |
US20070676624 |
申请日期 |
2007.02.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIANG PUO-YU;HUANG TSUNG-YI;CHEN FU-HSIN;LI TING-PANG;WU CHUNG-YEH |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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