METHOD FOR LEAKAGE REDUCTION IN FABRICATION OF HIGH -DENSITY FRAM ARRAYS

摘要

A method is provided for fabricating a ferroelectric capacitor structure including a method for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The method comprises etching portions of an upper electrode, etching ferroelectric material (20), and etching a lower electrode to define a patterned ferroelectric capacitor structure, and etching a portion of a lower electrode diffusion barrier structure (30a, 30b). The method further comprises ashing the patterned ferroelectric capacitor structure using a first ashing process, where the ash comprises an oxygen/nitrogen/water-containing ash, performing a wet clean process after the first ashing process, and ashing the patterned ferroelectric capacitor structure using a second ashing process.