| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve light extracting efficiency of the light emitting device by forming a slant surface along a crystal surface of a nitride single crystal. A nitride semiconductor light emitting device includes a light emitting stack structure, first and second electrode pads(39a,39b), plural grooves(H), and an insulation film(37). The light emitting stack structure includes first and second conductive type nitride semiconductor layers and an active layer, which is arranged between the first and second conductive type nitride semiconductor layers. The first and second electrode pads are formed to be electrically connected to the first and second conductive type nitride semiconductor layers, respectively. The grooves are formed to have a depth to at least a portion of the first conductive type nitride semiconductor layer under the second electrode pad. The insulation film is formed on an inner surface of the groove, such that the light emitting stack structure, which is exposed by the groove, is electrically insulated from the second electrode pad.
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