| 摘要 |
An ion doping apparatus and a method thereof are provided to prevent a doping defect by controlling a beam current of an ion beam and an ion amount in real time. An ion doping apparatus includes an ion source(100), a substrate fixing unit(200), a beam current correcting unit(300), a doping amount measuring unit(400), and an ion beam control unit(500). The ion source produces ion beam. The substrate fixing unit fixes a substrate to which an ion is doped. The beam current correcting unit corrects beam current by positions of the ion beam between the ion source and the substrate fixing unit. The doping amount measuring unit is positioned on the same plate as that of the substrate, and measures a doping amount of ion. The ion beam control unit is connected with the doping amount measuring unit, and controls the ion source and the beam current correcting unit according to the doping amount of the ion.
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