| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which can be improved in light emission efficiency by reducing light absorption loss at a contact layer. <P>SOLUTION: This nitride semiconductor light-emitting element comprises an n-type contact layer 4 formed on a sapphire substrate 1; a multiple quantum well (MQW) active layer 5, which is formed on the n-type contact layer 4 consisting of nitride semiconductor layer, a p-type clad layer 7 formed on the MQW active layer 5, an undoped contact layer 8 formed on the p-type clad layer 7; and a p-type electrode 9 formed on the undoped contact layer 8. <P>COPYRIGHT: (C)2008,JPO&INPIT |
