| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT which can be reduced in saturation current and can be improved in short circuit resistance without providing an external resistor. SOLUTION: In the trench type IGBT 10, a ladder-like emitter region 15 is formed in a surface portion of a P-channel region 14 and trenches 16 are formed from the surface of a stripe-geometry portion 15a of the emitter region 15 in such a manner as to reach an N<SP>-</SP>semiconductor layer 13, penetrating part of the P-channel region 14. A gate insulation film 17 is so formed as to cover the inner wall surfaces of the trenches 16, and a gate electrode 18 is so formed as to fill up the trenches 16. The emitter region 15 has a low impurity concentration. A first contact portion 21a where an emitter electrode is brought into contact with the emitter region 15 is formed wide in a cross bar-like portion 15b of the emitter region 15, while a second contact portion 21b where the emitter electrode is brought into contact with the P-channel region 14 is formed smaller in width than the first contact portion 21a. COPYRIGHT: (C)2008,JPO&INPIT
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