发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To achieve a nonvolatile semiconductor memory device in which data requiring security can be stored like the identification number being intrinsic to a chip. <P>SOLUTION: Information indicating the number of times of erasure of the erasion unit region is present in the management information region of the erasure unit region in a part of region or a whole region of a memory region, and when the information is the prescribed value, voltage required for erasure is not applied to the word line or the data line or the source line of part of the region or the whole region, Also, the same control is performed for writing. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008171565(A) 申请公布日期 2008.07.24
申请号 JP20080089710 申请日期 2008.03.31
申请人 RENESAS TECHNOLOGY CORP 发明人 OUCHI KATSUMI;KATAYAMA KUNIHIRO;TSUNEHIRO TAKASHI;TAMURA TAKAYUKI;FURUSAWA KAZUNORI
分类号 G11C16/02 主分类号 G11C16/02
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