发明名称 Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen
摘要 Three-layered stacked magnetic spin polarisation device with memory, using such a device. According to the invention, the device includes a three-layered stack (16) which constitutes the free magnetic layer. This triple layer consists of two magnetic layers (161, 163) separated by a non-magnetic conducting layer (162). This stack does not include a demagnetising field, which reduces the critical writing density. The trapped layer may, itself, consist of a triple layer (12). Application in the manufacture of magnetic memories.
申请公布号 DE60133622(D1) 申请公布日期 2008.05.29
申请号 DE2001633622 申请日期 2001.12.05
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 REDON, OLIVIER;DIENY, BERNARD;RODMACQ, BERNARD
分类号 G11C11/14;G11C11/16;G11C11/15;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08 主分类号 G11C11/14
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