发明名称 |
METHODS OF FORMING SEMICONDUCTOR-ON-INSULATING (SOI) FIELD EFFECT TRANSISTORS WITH BODY CONTACTS |
摘要 |
Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.
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申请公布号 |
US2008113474(A1) |
申请公布日期 |
2008.05.15 |
申请号 |
US20080972131 |
申请日期 |
2008.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SUNG-YOUNG;SHIN DONG-SUK |
分类号 |
H01L21/336;H01L21/00;H01L27/01;H01L29/06;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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