发明名称 PHYSICAL VAPOR DEPOSITION APPARATUS FOR SEMICONDUCTOR MANUFACTURING
摘要 A physical vapor deposition apparatus is provided to effectively eject pollutants and out gases from a chamber by spraying a purge gas into the chamber. A heater is arranged on an inner lower portion of a chamber(110). A wafer is mounted on the chamber. A lead(120) is coupled with an upper portion of the chamber. A metal target(130) is mounted on a center of a lower surface of the lead. A center portion of the metal target is relatively thick, while an outer flange portion is relatively thin. The flange portion is mated with the lower surface of the lead. A purge gas spraying hole(132) is formed on the lower surface of the lead or a lower surface of the metal target and sprays a purge gas downwards to an outer periphery of the heater, such that pollutants and out gases are ejected from the chamber. A purge gas ventilating hole(116) is formed on an inner lower surface of the chamber to face the purge gas spraying hole. The purge gas ventilating hole ejects the purge gas, the pollutants, and the out gases from the chamber to outside.
申请公布号 KR20080037786(A) 申请公布日期 2008.05.02
申请号 KR20060104857 申请日期 2006.10.27
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 KIM, DEOK JIN
分类号 H01L21/203 主分类号 H01L21/203
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