MULTILAYER REFLECTION FILM ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SAME

摘要

PROBLEM TO BE SOLVED: To provide a multilayer reflection film electrode and a compound semiconductor light emitting device with the same.

SOLUTION: A multilayer reflection film electrode has a reflection electrode layer 122 laminated on a p-type semiconductor later 100, an agglomeration preventing electrode layer 126 laminated on the reflection electrode layer 122 to prevent an agglomeration phenomenon of the reflection electrode layer 122, and a diffusion preventing electrode layer 124 inserted between the reflection electrode layer 122 and the agglomeration preventing electrode layer 126 to prevent the diffusion of the agglomeration preventing electrode layer 126.

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