发明名称 |
Germanium photo detector having planar surface through germanium epitaxial overgrowth |
摘要 |
A method of fabricating a germanium photo detector includes preparing a silicon substrate wafer and depositing and planarizing a silicon oxide layer on the silicon substrate. Contact holes are formed in the silicon oxide layer. An N+ epitaxial germanium layer is grown on the silicon oxide layer and in the contact holes. An N+ germanium layer is formed by ELO. The structure is smoothed and thinned. An intrinsic germanium layer is grown on the N+ epitaxial germanium layer. A P+ germanium layer is formed on the intrinsic germanium layer and a silicon oxide overcoat is deposited. A window is opened through the silicon oxide overcoat to the P+ germanium layer. A layer of conductive material is deposited on the silicon oxide overcoat and in the windows therein. The conductive material is etched to form individual sensing elements.
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申请公布号 |
US7361526(B2) |
申请公布日期 |
2008.04.22 |
申请号 |
US20060353802 |
申请日期 |
2006.02.13 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;LEE JONG-JAN;HSU SHENG TENG;TWEET DOUGLAS J. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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