| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, a chain type FeRAM having a 1PEP_FeRAM capacitor structure, having a microscopic capacitor structure with its manufacturing yield improved. SOLUTION: The semiconducrtor device comprises a semiconductor substrate 10; a transistor MT arranged on the semiconductor substrate and having a source-drain diffusion layers 26, 28, a gate insulating film 32 arranged on the semiconductor substrate between the source-drarin diffusion layers, and a gate electrode 30 arranged on the gate insulating film; an interlayer insulating film 8 arranged on the transistor MT, a plug electrode 12 arranged on one source-drain diffusion layer 26, and a plurality of ferroelectric capacitors C<SB>FE</SB>arranged on the interlayer insulating layer and comprising a laminated structure of a lower electrode 14, a ferroelectric film 16, and an upper electrode 18. A pair of two ferroelectric capacitors have a common lower electrode 14 and a discrete upper electrode 18, the plug electrode is arranged under the pair of ferroelectric capacitors, and the whole surface of the plug electrode is covered by the lower electrode. COPYRIGHT: (C)2008,JPO&INPIT
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