| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can optimize the surface state of a pad electrode (exposure-purposing layer) at the finish of an etching process. SOLUTION: The method includes the etching process in which the surface (Al) of the pad electrode is exposed from under a protective film (SiN) 20 by selectively etching the protective film. The etching process involves irradiating light toward the surface of the pad electrode and measuring the intensity of the reflected light, continuously conducting the etching process and the intensity measurement of the reflected light even after the Al is exposed from under the protective layer, and finishing the etching process when the intensity of the reflected light reaches a predetermined value A. COPYRIGHT: (C)2008,JPO&INPIT
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